First Sensor AG Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,900 nm, Series 9 Multi-Element Array 3001214

Description
These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range Low gain slope above bias voltage Potentially low bias operation Low temperature coefficient Active surface diameter of up to 5 mm
Datasheet
Description
These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range Low gain slope above bias voltage Potentially low bias operation Low temperature coefficient Active surface diameter of up to 5 mm
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,900 nm, Series 9 Multi-Element Array - 3001214 - First Sensor AG
Berlin, Germany
Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,900 nm, Series 9 Multi-Element Array
3001214
Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,900 nm, Series 9 Multi-Element Array 3001214
These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range Low gain slope above bias voltage Potentially low bias operation Low temperature coefficient Active surface diameter of up to 5 mm

These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels.

Features:

  • Fast rise time in 900 nm range
  • Low gain slope above bias voltage
  • Potentially low bias operation
  • Low temperature coefficient
  • Active surface diameter of up to 5 mm
Supplier's Site Datasheet
Sheung Wan, Hong Kong
Photodiodes
3001214
Photodiodes 3001214
Photodiodes QA4000-9 TO (TO8Si)

Photodiodes QA4000-9 TO (TO8Si)

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Technical Specifications

  First Sensor AG VAST STOCK CO., LIMITED
Product Category Photodiodes Photodiodes
Product Number 3001214 3001214
Product Name Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,900 nm, Series 9 Multi-Element Array Photodiodes
Photodiode Type Avalanche Photodiode
Photodiode Spectral Response IR
Spectral Response Range 750 to 930 nm (7500 to 9300 Å)
Photodiode Material Silicon
Photodiode Package SMT; TO8Si
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