First Sensor AG IR Photodiode with Minimal Dark Current, Series 6 3001208

Description
High-performance PIN photodiodes for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection. Features: PIN photodiodes optimized for photovoltaic and photoconductive use Very low dark current High shunt resistance Long charge carrier life time High breakdown voltage
Datasheet
Description
High-performance PIN photodiodes for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection. Features: PIN photodiodes optimized for photovoltaic and photoconductive use Very low dark current High shunt resistance Long charge carrier life time High breakdown voltage
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IR Photodiode with Minimal Dark Current, Series 6 - 3001208 - First Sensor AG
Berlin, Germany
IR Photodiode with Minimal Dark Current, Series 6
3001208
IR Photodiode with Minimal Dark Current, Series 6 3001208
High-performance PIN photodiodes for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection. Features: PIN photodiodes optimized for photovoltaic and photoconductive use Very low dark current High shunt resistance Long charge carrier life time High breakdown voltage

High-performance PIN photodiodes for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection.

Features:

  • PIN photodiodes optimized for photovoltaic and photoconductive use
  • Very low dark current
  • High shunt resistance
  • Long charge carrier life time
  • High breakdown voltage
Supplier's Site Datasheet
Sheung Wan, Hong Kong
Photodiodes
3001208
Photodiodes 3001208
Photodiodes 10mm sqd PIN dect Photodiode

Photodiodes 10mm sqd PIN dect Photodiode

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Technical Specifications

  First Sensor AG VAST STOCK CO., LIMITED
Product Category Photodiodes Photodiodes
Product Number 3001208 3001208
Product Name IR Photodiode with Minimal Dark Current, Series 6 Photodiodes
Photodiode Type PIN Photodiode
Photodiode Spectral Response IR
Spectral Response Range 700 to 950 nm (7000 to 9500 Å)
Photodiode Material Silicon
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