The J112/A is an N-channel JFET designed for high-gain, low-noise switching and commutation applications. It is available in TO-92 through-hole and SOT23 surface-mount packages, with a molded plastic case rated UL 94 V-0. The device has a gate-to-source breakdown voltage of -40 V, a drain-to-source saturation current of -2 mA, and a gate-to-source cutoff voltage of -2 V. Maximum power dissipation is 360 mW with a junction operating temperature range of -55 to 125 °C. Integrated input and gate-drain capacitances are 5 pF each at -10 V bias. Typical rise time is 6 ns with an 800 Ω load. RoHS compliant.
JFETs JFET N-Channel -35V Low Noise Product overview: J112 from InterFET is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, -35V. Search-friendly keywords include transistor, BJT, switching, amplification, N-Channel, -35V, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-J112 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 288-J112 |
| Product Name | N-Channel -35V Bipolar Transistor |
| Package Type | Bulk |
