The MRF581A is an NPN silicon RF transistor designed for high-current, low-power amplifier applications up to 1.0 GHz. It is housed in a 4-lead package with leads 1 and 3 as emitter, lead 2 as collector, and lead 4 as base. Maximum collector current is 200 mA, collector-base voltage is 30 V, collector-emitter voltage is 15 V, and power dissipation is 1.25 W at 25 °C. The junction and storage temperature range is -65 °C to +150 °C. Typical current gain (hFE) is 90 to 250 at 50 mA and 5 V, and collector-base capacitance is 2.0 to 3.0 pF at 10 V and 1.0 MHz. Power gain is 13 to 15.5 dB at 0.5 GHz. The device features an Omnigold™ metalization system.
RF Bipolar Transistors RF Transistor Product overview: MRF581A from Advanced Semiconductor, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-MRF581A can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-MRF581A |
| Product Name | Bipolar Transistor |
| Polarity | NPN |
| Package Type | Tray |
| Packing Method | Tray |
