Custom Silicon Solutions, Inc. IP Products 16K EEPROM

Description
This nonvolatile memory is a 16K bit EEPROM macro cell, organized 2K by 8. It may be re-configured for sizes from 1K to 64K bits and from 8 to 32 bits per word. It features low power, a wide supply range, a synchronous read mode and three programming modes: Page Erase, Block Erase and Page Write. A data register is included that holds eight bytes (one page) of data. During a Page Write operation, the contents of this register are programmed into the selected row (page) of memory. This memory macro cell is designed for AMI’s 0.5 micron, CMOS process. For more information, please refer to the following documents or contact CSS.
Datasheet
Description
This nonvolatile memory is a 16K bit EEPROM macro cell, organized 2K by 8. It may be re-configured for sizes from 1K to 64K bits and from 8 to 32 bits per word. It features low power, a wide supply range, a synchronous read mode and three programming modes: Page Erase, Block Erase and Page Write. A data register is included that holds eight bytes (one page) of data. During a Page Write operation, the contents of this register are programmed into the selected row (page) of memory. This memory macro cell is designed for AMI’s 0.5 micron, CMOS process. For more information, please refer to the following documents or contact CSS.
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IP Products 16K EEPROM
This nonvolatile memory is a 16K bit EEPROM macro cell, organized 2K by 8. It may be re-configured for sizes from 1K to 64K bits and from 8 to 32 bits per word. It features low power, a wide supply range, a synchronous read mode and three programming modes: Page Erase, Block Erase and Page Write. A data register is included that holds eight bytes (one page) of data. During a Page Write operation, the contents of this register are programmed into the selected row (page) of memory. This memory macro cell is designed for AMI’s 0.5 micron, CMOS process. For more information, please refer to the following documents or contact CSS.

This nonvolatile memory is a 16K bit EEPROM macro cell, organized 2K by 8. It may be re-configured for sizes from 1K to 64K bits and from 8 to 32 bits per word. It features low power, a wide supply range, a synchronous read mode and three programming modes: Page Erase, Block Erase and Page Write. A data register is included that holds eight bytes (one page) of data. During a Page Write operation, the contents of this register are programmed into the selected row (page) of memory. This memory macro cell is designed for AMI’s 0.5 micron, CMOS process. For more information, please refer to the following documents or contact CSS.

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Technical Specifications

  Custom Silicon Solutions, Inc.
Product Category Application Specific Integrated Circuits (ASIC)
Product Number 16K EEPROM
Product Name IP Products
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