Custom Silicon Solutions, Inc. IP Products SRAM (C3 Process)

Description
This memory macro is a configurable static RAM. Its architecture will support a wide array of memory sizes. It is optimized for low power and high density. It features a wide supply range (1.25V to 5.5V), a synchronous read mode and dual data I/O ports. This macro cell is designed for a 0.35 micron, CMOS process. For more information, please refer to the following documents or contact CSS.
Datasheet
Description
This memory macro is a configurable static RAM. Its architecture will support a wide array of memory sizes. It is optimized for low power and high density. It features a wide supply range (1.25V to 5.5V), a synchronous read mode and dual data I/O ports. This macro cell is designed for a 0.35 micron, CMOS process. For more information, please refer to the following documents or contact CSS.
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This memory macro is a configurable static RAM. Its architecture will support a wide array of memory sizes. It is optimized for low power and high density. It features a wide supply range (1.25V to 5.5V), a synchronous read mode and dual data I/O ports. This macro cell is designed for a 0.35 micron, CMOS process. For more information, please refer to the following documents or contact CSS.

This memory macro is a configurable static RAM. Its architecture will support a wide array of memory sizes. It is optimized for low power and high density. It features a wide supply range (1.25V to 5.5V), a synchronous read mode and dual data I/O ports. This macro cell is designed for a 0.35 micron, CMOS process. For more information, please refer to the following documents or contact CSS.

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Technical Specifications

  Custom Silicon Solutions, Inc.
Product Category Application Specific Integrated Circuits (ASIC)
Product Number SRAM (C3 Process)
Product Name IP Products
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