Richardson RFPD Silicon Carbide MOSFET Modules CCS020M12CM2

Description
1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Note: Please see Associated Products tab above for recommended gate driver
Request a Quote
Description
1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Note: Please see Associated Products tab above for recommended gate driver
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - CCS020M12CM2 - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
CCS020M12CM2
Silicon Carbide MOSFET Modules CCS020M12CM2
1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Note: Please see Associated Products tab above for recommended gate driver

1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module

Features

  • Ultra Low Loss
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • Ease of Paralleling
  • Copper Baseplate and Aluminum Nitride Insulator

Benefits

  • Enables Compact and Lightweight Systems
  • High Efficiency Operation
  • Mitigates Over-voltage Protection
  • Reduced Thermal Requirements
  • Reduced System Cost

Note: Please see Associated Products tab above for recommended gate driver

Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CCS020M12CM2
Product Name Silicon Carbide MOSFET Modules
Package Type 47x108
Unlock Full Specs
to access all available technical data

Similar Products

Power MOSFET Transistor - APT37M100B2 - Richardson RFPD
Specs
rDS(on) 0.3300 ohms
Package Type T-Max™
View Details
Silicon Carbide MOSFETs - C3M0015065K - Richardson RFPD
Specs
rDS(on) 0.0150 ohms
Package Type TO-247; TO-247-4
View Details
Silicon Carbide MOSFET Modules - CAS300M12BM2 - Richardson RFPD
Specs
Package Type 62x106
View Details