Richardson RFPD Power MOSFET Transistor APT5010LVRG

Description
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
  • Power MOSFET Transistor - APT5010LVRG - Richardson RFPD
    Richardson RFPD
Request a Quote
Description
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Power MOSFET Transistor - APT5010LVRG - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Power MOSFET Transistor
APT5010LVRG
Power MOSFET Transistor APT5010LVRG
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category Power MOSFET
Product Number APT5010LVRG
Product Name Power MOSFET Transistor
rDS(on) 0.1000 ohms
Unlock Full Specs
to access all available technical data