Richardson RFPD RF and mmW Front End Module ADRF5519BCPZN

Description
The ADRF5519 is a dual-channel, integrated RF, front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.3 GHz to 2.8 GHz. The ADRF5519 is configured in dual channels with a cascading two stage low noise amplifier (LNA) and a high power silicon single pole, double-throw (SPDT) switch. In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.0 dB and a high gain of 35 dB at 2.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 14 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA. In transmit operation, RF inputs are connected to a termination pin (ANT-CHA or ANT-CHB connected to TERM-CHA or TERM-CHB, respectively). The switch provides a low insertion loss of 0.5 dB and handles a long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation. The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.
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Description
The ADRF5519 is a dual-channel, integrated RF, front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.3 GHz to 2.8 GHz. The ADRF5519 is configured in dual channels with a cascading two stage low noise amplifier (LNA) and a high power silicon single pole, double-throw (SPDT) switch. In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.0 dB and a high gain of 35 dB at 2.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 14 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA. In transmit operation, RF inputs are connected to a termination pin (ANT-CHA or ANT-CHB connected to TERM-CHA or TERM-CHB, respectively). The switch provides a low insertion loss of 0.5 dB and handles a long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation. The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.
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Suppliers

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Description
Supplier Links
RF and mmW Front End Module - ADRF5519BCPZN - Richardson RFPD
Downers Grove, IL, United States
RF and mmW Front End Module
ADRF5519BCPZN
RF and mmW Front End Module ADRF5519BCPZN
The ADRF5519 is a dual-channel, integrated RF, front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.3 GHz to 2.8 GHz. The ADRF5519 is configured in dual channels with a cascading two stage low noise amplifier (LNA) and a high power silicon single pole, double-throw (SPDT) switch. In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.0 dB and a high gain of 35 dB at 2.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 14 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA. In transmit operation, RF inputs are connected to a termination pin (ANT-CHA or ANT-CHB connected to TERM-CHA or TERM-CHB, respectively). The switch provides a low insertion loss of 0.5 dB and handles a long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation. The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.

The ADRF5519 is a dual-channel, integrated RF, front-end multichip module designed for time division duplexing (TDD) applications that operates from 2.3 GHz to 2.8 GHz. The ADRF5519 is configured in dual channels with a cascading two stage low noise amplifier (LNA) and a high power silicon single pole, double-throw (SPDT) switch.

In high gain mode, the cascaded two-stage LNA and switch offer a low noise figure (NF) of 1.0 dB and a high gain of 35 dB at 2.6 GHz with an output third-order intercept point (OIP3) of 32 dBm (typical). In low gain mode, one stage of the two-stage LNA is in bypass, providing 14 dB of gain at a lower current of 36 mA. In power-down mode, the LNAs are turned off and the device draws 12 mA.

In transmit operation, RF inputs are connected to a termination pin (ANT-CHA or ANT-CHB connected to TERM-CHA or TERM-CHB, respectively). The switch provides a low insertion loss of 0.5 dB and handles a long-term evolution (LTE) average power (9 dB peak to average ratio (PAR)) of 43 dBm for full lifetime operation. The device comes in a RoHS-compliant, compact, 6 mm × 6 mm, 40-lead LFCSP package.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category IC Interfaces
Product Number ADRF5519BCPZN
Product Name RF and mmW Front End Module
Device Type Front End
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