Richardson RFPD RF and Microwave Switch ADRF5130BCPZ-R7

Description
The ADRF5130 is a high power, reflective, 0.7 GHz to 3.5 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5130 has high power handling of 43 dBm (maximum), a low insertion loss of 0.6 dB, input third-order intercept of 68 dBm (typical), and 0.1 dB compression (P0.1dB) of 46 dBm. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches. The device comes in a RoHS compliant, compact, 24-lead, 4 mm × 4 mm LFCSP package.
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Description
The ADRF5130 is a high power, reflective, 0.7 GHz to 3.5 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5130 has high power handling of 43 dBm (maximum), a low insertion loss of 0.6 dB, input third-order intercept of 68 dBm (typical), and 0.1 dB compression (P0.1dB) of 46 dBm. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches. The device comes in a RoHS compliant, compact, 24-lead, 4 mm × 4 mm LFCSP package.
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RF and Microwave Switch - ADRF5130BCPZ-R7 - Richardson RFPD
Downers Grove, IL, United States
RF and Microwave Switch
ADRF5130BCPZ-R7
RF and Microwave Switch ADRF5130BCPZ-R7
The ADRF5130 is a high power, reflective, 0.7 GHz to 3.5 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5130 has high power handling of 43 dBm (maximum), a low insertion loss of 0.6 dB, input third-order intercept of 68 dBm (typical), and 0.1 dB compression (P0.1dB) of 46 dBm. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches. The device comes in a RoHS compliant, compact, 24-lead, 4 mm × 4 mm LFCSP package.

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.5 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5130 has high power handling of 43 dBm (maximum), a low insertion loss of 0.6 dB, input third-order intercept of 68 dBm (typical), and 0.1 dB compression (P0.1dB) of 46 dBm. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches.

The device comes in a RoHS compliant, compact, 24-lead, 4 mm × 4 mm LFCSP package.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Switches
Product Number ADRF5130BCPZ-R7
Product Name RF and Microwave Switch
Package Type LFCSP
Frequency Range 700 to 3500 MHz
Insertion Loss 0.7000 dB
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