The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 1200 to 1400 MHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface mount package with earless flange.
- GaN on SiC HEMT technology
- Broadband internal input matching
- Pb-free and RoHS compliant