CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
RF JFET Transistors GaN HEMT 3.1-3.5GHz, 240 Watt
| Richardson RFPD | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | CGH35240F | CGH35240F |
| Product Name | RF Power Transistor | RF JFET Transistors |
| Transistor Technology / Material | GaN | |
| Package Type | Ceramic Flanged | |
| Power Gain | 11.5 dB |
