RF Transistors from Richardson RFPD

RF Power Transistor -- CGH35240F


 
 

CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.


Specifications

Manufacturer
Wolfspeed
Manufacturer Part Number
CGH35240F
Product Category
RF Transistors
Transistor Technology / Material
GaN
Package Type
 
Power Gain
 
Output Power
 
Operating Frequency