Infineon Technologies AG High Linearity RF Transistors BFR193W

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High Linearity RF Transistors - BFR193W - Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFR193W
High Linearity RF Transistors BFR193W
NPN Silicon RF Transistor Summary of Features For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.

NPN Silicon RF Transistor


Summary of Features

  • For low noise, high-gain amplifiers up to 2 GHz
  • For linear broadband amplifiers
  • fT = 8 GHz, NFmin = 1 dB at 900 MHz
  • Pb-free (RoHS compliant) package

Potential Applications

  • Wireless Communications
  • LNA in RF Front-end
  • For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
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Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFR193W
Product Name High Linearity RF Transistors
Package Type SOT323; SOT323
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