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Infineon Technologies AG N-Channel Power MOSFET BSC052N03LS

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N-Channel Power MOSFET - BSC052N03LS - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC052N03LS
N-Channel Power MOSFET BSC052N03LS
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6) Summary of Features Ultra low gate and output charge Lowest on-state resistance in small footprint packages Easy to design in Benefits Increased battery lifetime Improved EMI behavior making external snubber networks obsolete Saving costs Saving space Reducing power losses Potential Applications Onboard charger Notebook Mainboard DC-DC VRD/VRM Motor control LED

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)


Summary of Features

  • Ultra low gate and output charge
  • Lowest on-state resistance in small footprint packages
  • Easy to design in

Benefits

  • Increased battery lifetime
  • Improved EMI behavior making external snubber networks obsolete
  • Saving costs
  • Saving space
  • Reducing power losses

Potential Applications

  • Onboard charger
  • Notebook
  • Mainboard
  • DC-DC
  • VRD/VRM
  • Motor control
  • LED
Supplier's Site Datasheet
 - 8275344P - RS Components, Ltd.
Corby, Northants, United Kingdom
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on) Channel Type = N Maximum Continuous Drain Current = 57 A Maximum Drain Source Voltage = 30 V Maximum Drain Source Resistance = 7.2 mOhms Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1.2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TDSON Mounting Type = Surface Mount Transistor Configuration = Single Delivery on production packaging - Reel. This product is non-returnable.

OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on)
Channel Type = N
Maximum Continuous Drain Current = 57 A
Maximum Drain Source Voltage = 30 V
Maximum Drain Source Resistance = 7.2 mOhms
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1.2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TDSON
Mounting Type = Surface Mount
Transistor Configuration = Single
Delivery on production packaging - Reel. This product is non-returnable.

Supplier's Site
 - 8275344 - RS Components, Ltd.
Corby, Northants, United Kingdom
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on) Channel Type = N Maximum Continuous Drain Current = 57 A Maximum Drain Source Voltage = 30 V Maximum Drain Source Resistance = 7.2 mOhms Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1.2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TDSON Mounting Type = Surface Mount Transistor Configuration = Single

OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on)
Channel Type = N
Maximum Continuous Drain Current = 57 A
Maximum Drain Source Voltage = 30 V
Maximum Drain Source Resistance = 7.2 mOhms
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1.2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TDSON
Mounting Type = Surface Mount
Transistor Configuration = Single

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 30V 57A TDSON-8 OptiMOS

MOSFET N-Ch 30V 57A TDSON-8 OptiMOS

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC052N03LS - 1000220-BSC052N03LS - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC052N03LS
1000220-BSC052N03LS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC052N03LS 1000220-BSC052N03LS
Manufacturer: Infineon Technologies Win Source Part Number: 1000220-BSC052N03LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A (Ta), 57A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 770pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.2 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1000220-BSC052N03LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17A (Ta), 57A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 770pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.2 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG RS Components, Ltd. VAST STOCK CO., LIMITED Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC052N03LS 8275344P BSC052N03LS 1000220-BSC052N03LS
Product Name N-Channel Power MOSFET MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC052N03LS
Polarity N-Channel; N N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0052 ohms 0.0072 ohms
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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