Infineon Technologies AG Single IGBTs IRGS4610DPBF

Description
IGBT 600V 16A 77W Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IRGS4610DPBF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IRGS4610DPBF-ND
Single IGBTs IRGS4610DPBF-ND
IGBT 600V 16A 77W Surface Mount D2PAK

IGBT 600V 16A 77W Surface Mount D2PAK

Supplier's Site Datasheet
 - 8724262 - RS Components, Ltd.
Corby, Northants, United Kingdom
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs Maximum Continuous Collector Current = 16 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 77 W Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Channel Type = N Pin Count = 3 Switching Speed = 8 - 30kHz Transistor Configuration = Single

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 16 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 77 W
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Channel Type = N
Pin Count = 3
Switching Speed = 8 - 30kHz
Transistor Configuration = Single

Supplier's Site
 - 8724262P - RS Components, Ltd.
Corby, Northants, United Kingdom
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs Maximum Continuous Collector Current = 16 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 77 W Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Channel Type = N Pin Count = 3 Switching Speed = 8 - 30kHz Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
Maximum Continuous Collector Current = 16 A
Maximum Collector Emitter Voltage = 600 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 77 W
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Channel Type = N
Pin Count = 3
Switching Speed = 8 - 30kHz
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - IRGS4610DPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IRGS4610DPBF
Discrete Semiconductor Products - Transistors - IGBTs IRGS4610DPBF
IGBT WITH RECOVERY DIODE

IGBT WITH RECOVERY DIODE

Supplier's Site
 - IRGS4610DPBF - Rochester Electronics
Newburyport, MA, United States
IRGS4610 - Discrete IGBT with Anti-Parallel Diode

IRGS4610 - Discrete IGBT with Anti-Parallel Diode

Supplier's Site Datasheet
 - IRGS4610DPBF - Rochester Electronics
Newburyport, MA, United States
IRGS4610 - Discrete IGBT with Anti-Parallel Diode

IRGS4610 - Discrete IGBT with Anti-Parallel Diode

Supplier's Site Datasheet

Technical Specifications

  DigiKey RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Rochester Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IRGS4610DPBF-ND 8724262 IRGS4610DPBF IRGS4610DPBF
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
TJ -40 to 175 C (-40 to 347 F)
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2PAK (TO-263) D2PAK
Packing Method Tube Tube; Tube Tube; Tube
Unlock Full Specs
to access all available technical data

Similar Products

600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations - FMD47-06KC5 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 47000 milliamps
View Details
IGBT Discretes - IGP30N60H3 - Infineon Technologies AG
Infineon Technologies AG
Specs
VCE(on) 600 volts
Switching Speed 20 to 100 kHz
tr 22 ns
View Details
4 suppliers
8μs Short-Circuit Tolerance, 650V 30A, TO-247N, Field Stop Trench IGBT for Automotive - RGS60TS65HR - ROHM Semiconductor GmbH
Specs
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-247; TO-247N
Packing Method Tube
View Details
Power MOSFETs - Super J  MOS S2FD Model: FMW60N027S2FDHF - Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.0270 ohms
IDSS 95500 milliamps
View Details