IGBT Transistors LOW LOSS IGBT TECH 1200V 50A
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C
Maximum Continuous Collector Current = 50 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 190 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.13mm
Delivery on production packaging - Tube. This product is non-returnable.
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStopâ„¢ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V. • Very low VCEsat. • Low turn-off losses. • Short tail current. • Low EMI. • Maximum junction temperature 175°C
Maximum Continuous Collector Current = 50 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 190 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.13mm
Manufacturer: Infineon Technologies
Win Source Part Number: 1045146-IGW25T120
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: NPT, Trench Field Stop
Input Type: Standard
Gate Charge: 155nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: PG-TO247-3
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 190W
Pulsed Collector Current: 75A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 25A
Total Switching Energy(Ets): 4.2mJ
Turn-on and Turn-off delay time: 50ns/560ns
Testing Conditions: 600V, 25A, 22 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient
| VAST STOCK CO., LIMITED | RS Components, Ltd. | Win Source Electronics | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IGW25T120 | 8977214P | 1045146-IGW25T120 |
| Product Name | IGBT Transistors | IGBTs - Single - IGW25T120 | |
| Polarity | N-Channel | ||
| IC(max) | 50 amps | ||
| PD | 190000 milliwatts | 190000 milliwatts | |
| Package Type | TO-247; TO-247 | SOT3; PG-TO247-3 |
