ROHM Semiconductor GmbH High-Speed Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT RGTH00TS65D

Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
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Suppliers

Company
Product
Description
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Willich, Germany
High-Speed Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT
RGTH00TS65D
High-Speed Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT RGTH00TS65D
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Supplier's Site Datasheet
650V 50A Field Stop Trench IGBT - RGTH00TS65D - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
650V 50A Field Stop Trench IGBT
RGTH00TS65D
650V 50A Field Stop Trench IGBT RGTH00TS65D
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number RGTH00TS65D RGTH00TS65D
Product Name High-Speed Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT 650V 50A Field Stop Trench IGBT
PD 277000 milliwatts 277000 milliwatts
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