ROHM Semiconductor GmbH 5μs Short-Circuit Tolerance, 650V 25A, FRD Built-in, LPDS, Field Stop Trench IGBT RGT50NS65D(LPDS)

Description
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
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5μs Short-Circuit Tolerance, 650V 25A, FRD Built-in, LPDS, Field Stop Trench IGBT - RGT50NS65D(LPDS) - ROHM Semiconductor GmbH
Willich, Germany
5μs Short-Circuit Tolerance, 650V 25A, FRD Built-in, LPDS, Field Stop Trench IGBT
RGT50NS65D(LPDS)
5μs Short-Circuit Tolerance, 650V 25A, FRD Built-in, LPDS, Field Stop Trench IGBT RGT50NS65D(LPDS)
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Supplier's Site Datasheet
650V 25A Field Stop Trench IGBT - RGT50NS65D(LPDS) - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
650V 25A Field Stop Trench IGBT
RGT50NS65D(LPDS)
650V 25A Field Stop Trench IGBT RGT50NS65D(LPDS)
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number RGT50NS65D(LPDS) RGT50NS65D(LPDS)
Product Name 5μs Short-Circuit Tolerance, 650V 25A, FRD Built-in, LPDS, Field Stop Trench IGBT 650V 25A Field Stop Trench IGBT
PD 194000 milliwatts 194000 milliwatts
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