Manufacturer: Infineon Technologies
Win Source Part Number: 212014-SPA16N50C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-3
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 560V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 675μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 280 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
MOSFET N-chan CoolMOS 500V 16A TO220 - Discrete Semiconductors - MOSFET Transistors
Delivery on production packaging - Tube. This product is non-returnable.
MOSFET N-chan CoolMOS 500V 16A TO220 - Discrete Semiconductors - MOSFET Transistors
MOSFET N-chan CoolMOS 500V 16A TO220 - Discrete Semiconductors - MOSFET Transistors
MOSFET N-Ch 560V 16A TO220FP-3 CoolMOS C3
| Win Source Electronics | RS Components, Ltd. | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 212014-SPA16N50C3 | 1107465P | SPA16N50C3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPA16N50C3 | MOSFET | |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 560 volts | 500 volts | |
| PD | 34000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) |
