Nexperia B.V. 40 V, N-channel Trench MOSFET PMV130ENEAR

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Logic-level compatible
• Extended temperature range T_j = 175 °C
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C)
• AEC-Q101 qualified

Applications

• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits

N-Channel 40V 2.1A (Ta) 460mW (Ta), 5W (Tc) Surface Mount TO-236AB

N-Channel 40V 2.1A (Ta) 460mW (Ta), 5W (Tc) Surface Mount TO-236AB

N-Channel 40V 2.1A (Ta) 460mW (Ta), 5W (Tc) Surface Mount TO-236AB

MOSFET 40V N-channel Trench MOSFET

MOSFET N-CH 40V 2.1A TO236AB

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1089772-PMV130ENEAR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 460mW (Ta), 5W (Tc)
Family Name: PMV130ENEA
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 2.1A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 3.6nC @ 10V
Max Input Capacitance: 170pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 1.5A, 10V
Alternative Parts (Cross-Reference): 2SK3408-T1B; PMV130ENEA;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient