N-Channel 500V 4.5A (Tc) 74W (Tc) Through Hole TO-220AB
Manufacturer: Vishay
Win Source Part Number: 017541-IRF830PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 610pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.7A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 500V 4.5A TO220AB
MOSFET N-CH 500V HEXFET MOSFET
MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V
N CHANNEL MOSFET, 500V, 4.5A TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET, N, 500V, 4.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
| DigiKey | Win Source Electronics | LIXINC Electronics Co., Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF830PBF-ND | 017541-IRF830PBF | IRF830PBF | IRF830PBF | 70078865 | 63J7409 | 38K2858 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF830PBF | Discrete Semiconductor | MOSFET | MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 1.5 Ohms;ID 4.5A;TO-220AB;PD 74W;VGS +/-20V | N Channel Mosfet, 500V, 4.5A To-220; Channel Type Vishay | Mosfet, N, 500V, 4.5A, To-220; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220 | TO-3; TO-220 | TO-3; TO-220 | |
| V(BR)DSS | 500 volts | 500 volts | |||||
| PD | 74000 milliwatts | 74000 milliwatts | 74000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
