Fuji Electric Corp. of America Hard To Find - 2SK3594-01 2SK3594-01

Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Hard To Find - 2SK3594-01 - 1127650-2SK3594-01 - Win Source Electronics
Yishun, Singapore
Hard To Find - 2SK3594-01
1127650-2SK3594-01
Hard To Find - 2SK3594-01 1127650-2SK3594-01
Manufacturer: Fuji Electric Win Source Part Number: 1127650-2SK3594-01 Manufacturer Homepage: www.fujielectric.co. jp/eng/fdt/scd Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Fuji Electric
Win Source Part Number: 1127650-2SK3594-01
Manufacturer Homepage: www.fujielectric.co.jp/eng/fdt/scd
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Supplier's Site
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 50Milliohms;ID +/-45A;TO-220AB;PD 270W - 70212480 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 50Milliohms;ID +/-45A;TO-220AB;PD 270W
70212480
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 50Milliohms;ID +/-45A;TO-220AB;PD 270W 70212480
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`

Features:

  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
Supplier's Site

Technical Specifications

  Win Source Electronics Allied Electronics, Inc.
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1127650-2SK3594-01 70212480
Product Name Hard To Find - 2SK3594-01 MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 50Milliohms;ID +/-45A;TO-220AB;PD 270W
Package Type SOT3 TO-220
Polarity N-Channel
V(BR)DSS 200 volts
Unlock Full Specs
to access all available technical data

Similar Products

Nch 45V 1.6A Small Signal MOSFET - RTF016N05 - ROHM Semiconductor GmbH
Specs
Polarity N-Channel
V(BR)DSS 45 volts
IDSS 1600 milliamps
View Details
2 suppliers
Automotive IGBT Discretes - AIKB15N65DF5 - Infineon Technologies AG
Specs
VCE(on) 1.6 to 650 volts
Switching Speed 15 to 120 kHz
Package Type PG-TO263-3
View Details
Power MOSFETs - Super J  MOS S2FD Model: FMP60N105S2FDHF - Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.1050 ohms
IDSS 38100 milliamps
View Details
TPS1101 Single P-channel Enhancement-Mode MOSFET - TPS1101D - Texas Instruments
Specs
Polarity P-Channel
View Details
8 suppliers