SemiGen High-Voltage PIN Diode SGP7073

The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features: Low Capacitance and Resistance Easily Bondable with our F.A.C. Mesas High Reliability Applications: For use in low- to high-power switch, attenuator, duplexer and phase-shifting applications from 2 to 20 GHz.