ROHM Semiconductor GmbH 1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3030KL

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1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET - SCT3030KL - ROHM Semiconductor GmbH
Willich, Germany
1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3030KL
1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET SCT3030KL
SCT3030KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

SCT3030KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site Datasheet
N-channel Silicon Carbide Power MOSFET - SCT3030KL - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
N-channel Silicon Carbide Power MOSFET
SCT3030KL
N-channel Silicon Carbide Power MOSFET SCT3030KL
SCT3030KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

SCT3030KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Transistors Power MOSFET
Product Number SCT3030KL SCT3030KL
Product Name 1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET N-channel Silicon Carbide Power MOSFET
Package Type TO-247; TO-247N TO-247
Transistor Grade / Operating Range Commercial Commercial
Transistor Technology / Material Silicon Carbide
V(BR)DSS 1200 volts
rDS(on) 0.0300 ohms
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