STMicroelectronics, Inc. Memory - EPROM - M27C256B-10F1 M27C256B-10F1

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EPROM - M27C256B-10F1 - 090334-M27C256B-10F1 - Win Source Electronics
Yishun, Singapore
Memory - EPROM - M27C256B-10F1
090334-M27C256B-10F1
Memory - EPROM - M27C256B-10F1 090334-M27C256B-10F1
Manufacturer: STMicroelectronics Win Source Part Number: 090334-M27C256B-10F1 Packaging: Tube/Rail Mounting: Through Hole Technology: EPROM - UV Memory Size: 256Kb (32K x 8) Access Time: 100ns Family Name: M27C256B Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 28-CDIP Frit Seal with Window Supply Voltage - Operating: 4.5 V to 5.5 V Memory Format: EPROM Alternative Parts (Cross-Reference): AM27C256-55DCB; AM27C256-55DC; AM27C256-45DC; Introduction Date: July 01, 1998 ECCN: EAR99 Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 090334-M27C256B-10F1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: EPROM - UV
Memory Size: 256Kb (32K x 8)
Access Time: 100ns
Family Name: M27C256B
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 28-CDIP Frit Seal with Window
Supply Voltage - Operating: 4.5 V to 5.5 V
Memory Format: EPROM
Alternative Parts (Cross-Reference): AM27C256-55DCB; AM27C256-55DC; AM27C256-45DC;
Introduction Date: July 01, 1998
ECCN: EAR99
Country of Origin: China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Supplier's Site Datasheet
IC EPROM 256KBIT PARALLEL 28CDIP

IC EPROM 256KBIT PARALLEL 28CDIP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - M27C256B-10F1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M27C256B-10F1
Integrated Circuits (ICs) - Memory - Memory M27C256B-10F1
IC EPROM 256KBIT PARALLEL 28CDIP

IC EPROM 256KBIT PARALLEL 28CDIP

Supplier's Site
Memory - 497-1642-5-ND - DigiKey
Thief River Falls, MN, United States
EPROM - UV Memory IC 256Kb (32K x 8) Parallel 100ns 28-CDIP Frit Seal with Window

EPROM - UV Memory IC 256Kb (32K x 8) Parallel 100ns 28-CDIP Frit Seal with Window

Supplier's Site Datasheet
Memory - M27C256B-10F1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - UV Memory IC 256Kbit Parallel 100 ns 28-CDIP Frit Seal with Window

EPROM - UV Memory IC 256Kbit Parallel 100 ns 28-CDIP Frit Seal with Window

Supplier's Site Datasheet
Eprom, 256Kbit, 100Ns, Dip-28; Memory Size Stmicroelectronics - 37M4716 - Newark, An Avnet Company
Chicago, IL, United States
Eprom, 256Kbit, 100Ns, Dip-28; Memory Size Stmicroelectronics
37M4716
Eprom, 256Kbit, 100Ns, Dip-28; Memory Size Stmicroelectronics 37M4716
EPROM, 256KBIT, 100NS, DIP-28; Memory Size:256Kbit; EPROM Memory Configuration:32K x 8bit; No. of Pins:28Pins; Memory Case Style:DIP; Supply Voltage Min:4.5V; Supply Voltage Max:5V; Operating Temperature Min:0°C; Access Time:100ns RoHS Compliant: Yes

EPROM, 256KBIT, 100NS, DIP-28; Memory Size:256Kbit; EPROM Memory Configuration:32K x 8bit; No. of Pins:28Pins; Memory Case Style:DIP; Supply Voltage Min:4.5V; Supply Voltage Max:5V; Operating Temperature Min:0°C; Access Time:100ns RoHS Compliant: Yes

Supplier's Site Datasheet
Fort Worth, TX, USA
EPROM; 256 KB UV EPROM; 5V; 100; FDIP28W; 2 V (MIN.); 0.8 V (TYP.); 100 STANDBY
70013635
EPROM; 256 KB UV EPROM; 5V; 100; FDIP28W; 2 V (MIN.); 0.8 V (TYP.); 100 STANDBY 70013635
256 Kbit Memory UV EPROM, PDIP28 Package Type, -40 to +85°C Operating Temperature 100 μs⁄word Programming time It is ideally suited for microprocessor systems and is organized as 32,768 by 8 bits. Transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern

256 Kbit Memory UV EPROM, PDIP28 Package Type, -40 to +85°C Operating Temperature

  • 100 μs⁄word Programming time
    It is ideally suited for microprocessor systems and is organized as 32,768 by 8 bits. Transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern
Supplier's Site

Technical Specifications

  Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited DigiKey Quarktwin Technology Ltd. Newark, An Avnet Company Allied Electronics, Inc.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 090334-M27C256B-10F1 M27C256B-10F1 M27C256B-10F1 497-1642-5-ND M27C256B-10F1 37M4716 70013635
Product Name Memory - EPROM - M27C256B-10F1 Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory Eprom, 256Kbit, 100Ns, Dip-28; Memory Size Stmicroelectronics EPROM; 256 KB UV EPROM; 5V; 100; FDIP28W; 2 V (MIN.); 0.8 V (TYP.); 100 STANDBY
Memory Category EPROM; EPROM EPROM; EPROM EPROM; Non-Volatile EPROM EPROM; EPROM EPROM
Access Time 100 ns 100 ns 100 ns 100 ns 100 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 C (32 F) 0 to ? C (32 to ? F)
Package Type DIP; 28-CDIP Frit Seal with Window 28-CDIP (0.600", 15.24mm) Window DIP; 28-CDIP (0.600\", 15.24mm) Window DIP FDIP28W
Unlock Full Specs
to access all available technical data

Similar Products

 - AM27C512-55JI-G - Rochester Electronics
Rochester Electronics
Specs
Memory Category EPROM
Logic Family CMOS
Density 0 kbits
View Details
Memories - NOR Flash - Parallel NOR Flash - High Performance Page Mode - S29GL01GS11FHV023 - S29GL01GS11FHV023 - Infineon Technologies AG
Specs
Memory Category Flash
Access Time 110 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details
4 suppliers
 - 659797P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category NVRAM
Access Time 100 ns
Density 1000 kbits
View Details