Vishay Precision Group Sensors, Transducers - Optical Sensors - Phototransistors BPW85B

Description
PHOTOTRANSISTOR 450 TO 1080 NM
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Product
Description
Supplier Links
Sensors, Transducers - Optical Sensors - Phototransistors - BPW85B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Sensors, Transducers - Optical Sensors - Phototransistors
BPW85B
Sensors, Transducers - Optical Sensors - Phototransistors BPW85B
PHOTOTRANSISTOR 450 TO 1080 NM

PHOTOTRANSISTOR 450 TO 1080 NM

Supplier's Site
 - 7082829 - RS Components, Ltd.
Corby, Northants, United Kingdom
The BPW85 series, from Vishay Semiconductor, are a family of silicon NPN phototransistors. They are in standard 3mm (T-1) plastic packages with a clear lens. The BPW85 phototransistors are sensitive to visible and near IR radiation. The BPW85 series includes BPW85, BPW85A, BPW85B and BPW85C, and they are ideal for detectors in electronic control and drive circuits applications. . Features of the BPW85 phototransistors:. 3mm (T-1) package. Through-hole mounting. High photo sensitivity. High radiant sensitivity. Fast response times. Angle of half intensity: 25°. Operating temperature: -40 to +100 °C Spectrums Detected = Infrared, Visible Light Typical Fall Time = 2.3µs Typical Rise Time = 2µs Number of Channels = 1 Maximum Light Current = 4000µA Maximum Dark Current = 200nA Angle of Half Sensitivity = 50 ° Polarity = NPN Number of Pins = 2 Mounting Type = Through Hole

The BPW85 series, from Vishay Semiconductor, are a family of silicon NPN phototransistors. They are in standard 3mm (T-1) plastic packages with a clear lens. The BPW85 phototransistors are sensitive to visible and near IR radiation. The BPW85 series includes BPW85, BPW85A, BPW85B and BPW85C, and they are ideal for detectors in electronic control and drive circuits applications. .
Features of the BPW85 phototransistors:. 3mm (T-1) package. Through-hole mounting. High photo sensitivity. High radiant sensitivity. Fast response times. Angle of half intensity: 25°. Operating temperature: -40 to +100 °C
Spectrums Detected = Infrared, Visible Light
Typical Fall Time = 2.3µs
Typical Rise Time = 2µs
Number of Channels = 1
Maximum Light Current = 4000µA
Maximum Dark Current = 200nA
Angle of Half Sensitivity = 50 °
Polarity = NPN
Number of Pins = 2
Mounting Type = Through Hole

Supplier's Site
 - 7082829P - RS Components, Ltd.
Corby, Northants, United Kingdom
The BPW85 series, from Vishay Semiconductor, are a family of silicon NPN phototransistors. They are in standard 3mm (T-1) plastic packages with a clear lens. The BPW85 phototransistors are sensitive to visible and near IR radiation. The BPW85 series includes BPW85, BPW85A, BPW85B and BPW85C, and they are ideal for detectors in electronic control and drive circuits applications. . Features of the BPW85 phototransistors:. 3mm (T-1) package. Through-hole mounting. High photo sensitivity. High radiant sensitivity. Fast response times. Angle of half intensity: 25°. Operating temperature: -40 to +100 °C Spectrums Detected = Infrared, Visible Light Typical Fall Time = 2.3µs Typical Rise Time = 2µs Number of Channels = 1 Maximum Light Current = 4000µA Maximum Dark Current = 200nA Angle of Half Sensitivity = 50 ° Polarity = NPN Number of Pins = 2 Mounting Type = Through Hole Delivery on production packaging - Bag. This product is non-returnable.

The BPW85 series, from Vishay Semiconductor, are a family of silicon NPN phototransistors. They are in standard 3mm (T-1) plastic packages with a clear lens. The BPW85 phototransistors are sensitive to visible and near IR radiation. The BPW85 series includes BPW85, BPW85A, BPW85B and BPW85C, and they are ideal for detectors in electronic control and drive circuits applications. .
Features of the BPW85 phototransistors:. 3mm (T-1) package. Through-hole mounting. High photo sensitivity. High radiant sensitivity. Fast response times. Angle of half intensity: 25°. Operating temperature: -40 to +100 °C
Spectrums Detected = Infrared, Visible Light
Typical Fall Time = 2.3µs
Typical Rise Time = 2µs
Number of Channels = 1
Maximum Light Current = 4000µA
Maximum Dark Current = 200nA
Angle of Half Sensitivity = 50 °
Polarity = NPN
Number of Pins = 2
Mounting Type = Through Hole
Delivery on production packaging - Bag. This product is non-returnable.

Supplier's Site
 - 1452619 - RS Components, Ltd.
Corby, Northants, United Kingdom
Phototransistor Chip Plastic Silicon NPN - Optocouplers, Photodetectors & Photointerrupters - Phototransistors

Phototransistor Chip Plastic Silicon NPN - Optocouplers, Photodetectors & Photointerrupters - Phototransistors

Supplier's Site
Thief River Falls, MN, United States
Phototransistors
BPW85B-ND
Phototransistors BPW85B-ND
Phototransistors 850nm Top View Radial

Phototransistors 850nm Top View Radial

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Phototransistors
BPW85B
Phototransistors BPW85B
Phototransistors T-1 450 to 1080nm +/-25 deg

Phototransistors T-1 450 to 1080nm +/-25 deg

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited RS Components, Ltd. DigiKey VAST STOCK CO., LIMITED
Product Category Phototransistors Phototransistors Phototransistors Phototransistors
Product Number BPW85B 7082829 BPW85B-ND BPW85B
Product Name Sensors, Transducers - Optical Sensors - Phototransistors Phototransistors Phototransistors
Phototransistor Type Phototransistor Phototransistor Phototransistor
Mounting Option Through Hole Through Hole Plugin
Peak Wavelength 850 nm (8500 Å) 850 nm (8500 Å)
Collector Current 100 milliamps 4 milliamps
Collector Dark Current 200 nA 200 nA
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