Bipolar RF Transistors Datasheets

Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
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Bipolar RF Transistors Datasheets From:
Headquarters
Richardson RFPD
United States
LIXINC Electronics Co., Limited
China
Acme Chip Technology Co., Limited
China
Karl Kruse GmbH & Co. KG
Germany
LCSC Electronics Technology (HK) Limited
China
Northrop Grumman Corporation
Falls Church, VA
ROHM Semiconductor GmbH
Germany
Toshiba America, Inc.
New York, NY
TT Semiconductor, Inc.
Anaheim, CA
Utmel Electronic Limited
China
VAST STOCK CO., LIMITED
Hong Kong
Allied Electronics, Inc.
Fort Worth, TX
Belden Inc.
United States
EDAC, Inc.
Canada
FuxinSemi Semiconductor (Shenzhen) Co., Ltd.
China
Guangdong YFW Electronics Co, Ltd.
China
Hitachi America, Ltd., Industrial Components and Equipment Division
United States
Inventus Power
United States
ITT Inc.
United States
ITT Cannon
United States
Jiangsu High Diode Semiconductor Co., Ltd.
China
Luguang Electronic Technology CO.,LTD.
China
Magnatech LLC
United States
multicomp PRO
Chicago, IL
Newark, An Avnet Company
United States
NorComp
United States
NXP USA, Inc.
Austin, TX
Plessey Semiconductors, Ltd.
United Kingdom
pSemi
United States
Shenzhen SPTECH Micro-electronics Co., Ltd.
China
Teledyne Relays
United States
THAT Corporation
United States
Welwyn Components, Ltd.
United Kingdom