Analog Devices, Inc. 2 Watt Power Amplifier Chip, 6 - 10 GHz HMC591-SX

Description
Product Details The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33.5 dBm Output P1dB. Applications Point-to-Point Radios  Point-to-Multi-Point Radios  Test Equipment & Sensors  Military End-Use  Space
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Norwood, MA, USA
2 Watt Power Amplifier Chip, 6 - 10 GHz
HMC591-SX
2 Watt Power Amplifier Chip, 6 - 10 GHz HMC591-SX
Product Details The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33.5 dBm Output P1dB. Applications Point-to-Point Radios  Point-to-Multi-Point Radios  Test Equipment & Sensors  Military End-Use  Space

Product Details

The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33.5 dBm Output P1dB. Applications

  • Point-to-Point Radios 
  • Point-to-Multi-Point Radios 
  • Test Equipment & Sensors 
  • Military End-Use 
  • Space
Supplier's Site Datasheet

Technical Specifications

  Analog Devices, Inc.
Product Category Power Amplifiers
Product Number HMC591-SX
Product Name 2 Watt Power Amplifier Chip, 6 - 10 GHz
Unlock Full Specs
to access all available technical data

Similar Products