Alliance Memory, Inc. Integrated Circuits (ICs) - Memory AS4C256M8D3L-12BCN

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Product
Description
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Integrated Circuits (ICs) - Memory - 1187915-AS4C256M8D3L-12BCN - Win Source Electronics
Yishun, Singapore
Integrated Circuits (ICs) - Memory
1187915-AS4C256M8D3L-12BCN
Integrated Circuits (ICs) - Memory 1187915-AS4C256M8D3L-12BCN
Win Source Part Number: 1187915-AS4C256M8D3L -12BCN Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 242 Mounting: SMD (SMT) Technology: SDRAM - DDR3L Memory Type: Volatile Memory Size: 2Gb (256M x 8) Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5) Temperature Range - Operating: 0°C ~ 95°C (TC) Memory Format: DRAM Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Alternative Parts (Cross-Reference): AS4C256M8D3L12BCN; ECCN: EAR99 Fake Threat In the Open Market: 55 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0036 Mfr: Alliance Memory, Inc. Other Names: 1450-1102

Win Source Part Number: 1187915-AS4C256M8D3L-12BCN
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 242
Mounting: SMD (SMT)
Technology: SDRAM - DDR3L
Memory Type: Volatile
Memory Size: 2Gb (256M x 8)
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)
Temperature Range - Operating: 0°C ~ 95°C (TC)
Memory Format: DRAM
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Alternative Parts (Cross-Reference): AS4C256M8D3L12BCN;
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
Mfr: Alliance Memory, Inc.
Other Names: 1450-1102

Supplier's Site Datasheet
IC DRAM 2GBIT PARALLEL 78FBGA

IC DRAM 2GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - AS4C256M8D3L-12BCN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
AS4C256M8D3L-12BCN
Integrated Circuits (ICs) - Memory AS4C256M8D3L-12BCN
IC DRAM 2GBIT PARALLEL 78FBGA

IC DRAM 2GBIT PARALLEL 78FBGA

Supplier's Site
Memory - AS4C256M8D3L-12BCN - Nova Technology(HK) Co.,Ltd
Futian District, Shenzhen, China
SDRAM - DDR3L Memory IC 2Gb (256M x 8) Parallel 800 MHz 20 ns 78-FBGA (8x10.5)

SDRAM - DDR3L Memory IC 2Gb (256M x 8) Parallel 800 MHz 20 ns 78-FBGA (8x10.5)

Supplier's Site Datasheet
Memory - 1450-1102-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR3L Memory IC 2Gb (256M x 8) Parallel 800MHz 20ns 78-FBGA (8x10.5)

SDRAM - DDR3L Memory IC 2Gb (256M x 8) Parallel 800MHz 20ns 78-FBGA (8x10.5)

Supplier's Site Datasheet
Memory - AS4C256M8D3L-12BCN - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 78-FBGA (8x10.5)

SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 20 ns 78-FBGA (8x10.5)

Supplier's Site Datasheet
DDR3 SDRAM,2G,256M x 81.35V,78-ball FBGA - AS4C256M8D3L-12BCN - Karl Kruse GmbH & Co. KG
Kaarst, Germany
DDR3 SDRAM,2G,256M x 81.35V,78-ball FBGA
AS4C256M8D3L-12BCN
DDR3 SDRAM,2G,256M x 81.35V,78-ball FBGA AS4C256M8D3L-12BCN
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Nova Technology(HK) Co.,Ltd DigiKey Quarktwin Technology Ltd. Karl Kruse GmbH & Co. KG
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1187915-AS4C256M8D3L-12BCN AS4C256M8D3L-12BCN AS4C256M8D3L-12BCN AS4C256M8D3L-12BCN 1450-1102-ND AS4C256M8D3L-12BCN AS4C256M8D3L-12BCN
Product Name Integrated Circuits (ICs) - Memory Memory Integrated Circuits (ICs) - Memory Memory Memory Memory DDR3 SDRAM,2G,256M x 81.35V,78-ball FBGA
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM Chip
Access Time 20 ns 20 ns 20 ns 20 ns
Cycle Time 15 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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