Youtai Semiconductor Co., Ltd Single FETs, MOSFETs UMWIRF9Z24N

The UMW IRF9Z24N is a P-channel MOSFET designed for switching and amplification applications, housed in a TO-220 package measuring up to 10.3 mm in height, 16.2 mm in width, and 13.6 mm in length. It has a continuous drain current rating of -12 A at 25°C and -8.5 A at 100°C, with a drain-source voltage rating of -55 V and a maximum power dissipation of 45 W. The on-resistance is 175 mΩ at -10 V gate-source voltage, and the gate threshold voltage ranges from -2 V to -4 V. The device meets AEC-Q200 qualifications, has a storage temperature range of -55°C to 175°C, and is rated for 300°C soldering temperature for 10 seconds. It includes internal inductances of 4.5 nH (drain) and 7.5 nH (source), and a total gate charge of 19 nC.