Yageo USA Single FETs, MOSFETs XP4P016I

The XP4P016I is a P-channel enhancement mode power MOSFET designed for efficient switching in power applications. It is packaged in a TO-220CFM case with dimensions of 10.00-10.40 mm width, 12.78-13.65 mm length, and 4.40-4.90 mm thickness. The device has a drain-source voltage rating of -40 V, a continuous drain current of -36 A at 25°C, and a maximum on-resistance of 16 mΩ at -10 V gate voltage. It supports a single pulse avalanche energy of 45 mJ and has a maximum junction-to-case thermal resistance of 5 °C/W. The part is RoHS compliant and halogen-free, with an operating junction temperature range of -55 to 150 °C.