Yageo USA Single FETs, MOSFETs XP3R303GMT-L

The XP3R303GMT-L is an N-channel enhancement mode power MOSFET designed for efficient voltage conversion applications. It is packaged in a PMPAK 5x6L surface-mount package with a backside heat sink, measuring 5.10 mm x 6.45 mm max. The device has a drain-source voltage rating of 30 V, a continuous drain current of 31 A at 25°C, and an on-resistance of 3.3 mΩ at V_GS = 10 V and I_D = 30 A. It supports a pulsed drain current of 250 A and a total power dissipation of 56.8 W at 25°C. Thermal resistance from junction to case is 2.2 °C/W. The MOSFET is RoHS compliant and halogen-free, with an operating junction temperature range of -55 to 150 °C. The device meets standard infrared reflow soldering requirements.