Yageo USA Single FETs, MOSFETs XP3NA2R2CMT

XP3NA2R2CMT is an N-channel enhancement mode power MOSFET designed for DC-DC converter applications with a 30 V drain-source voltage rating and an ultra-low on-resistance of 2.25 mΩ at 10 V gate-source voltage. It is packaged in a PMPAK® 5x6 surface-mount package with a footprint compatible with SO-8 and includes a backside heat sink for improved thermal performance. The device supports a continuous drain current of 100 A limited by the package and 37 A at an ambient temperature of 25°C with a 10 V gate drive. It has a maximum total power dissipation of 52 W at 25°C and a thermal resistance from junction to case of 2.4°C/W. The gate threshold voltage ranges from 1.3 to 3 V, and the total gate charge at 10 V is up to 52.8 nC. The part is RoHS compliant and halogen-free, with an operating junction temperature range of -55°C to 150°C.