Yageo USA FET, MOSFET Arrays XP2535GEY

XP2535GEY is a complementary N- and P-channel enhancement mode MOSFET in a SOT-26 package, designed for efficient power switching applications. The N-channel device has a drain-source breakdown voltage of 20 V and a maximum continuous drain current of 4.6 A at 25°C with a maximum on-resistance of 32 mΩ at 4.5 V gate drive. The P-channel device has a drain-source breakdown voltage of -20 V and a maximum continuous drain current of -3.1 A at 25°C with a maximum on-resistance of 80 mΩ at -4.5 V gate drive. Both devices feature a total gate charge of 14.4 nC and 12.8 nC respectively, and operate over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 1.13 W. The package dimensions conform to the SOT-26 footprint, and the part is RoHS compliant and halogen-free.