WINSOK Semiconductor Transistors WSD30350DN56G

Description
30V 350A 104W 0.48mΩ@10V,20A 2.5V@250uA 1 N-Channel DFN-8(5x6) MOSFETs ROHS
  • Transistors - WSD30350DN56G - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 350A 104W 0.48mΩ@10V,20A 2.5V@250uA 1 N-Channel DFN-8(5x6) MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - WSD30350DN56G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
WSD30350DN56G
Transistors WSD30350DN56G
30V 350A 104W 0.48mΩ@10V,20A 2.5V@250uA 1 N-Channel DFN-8(5x6) MOSFETs ROHS

30V 350A 104W 0.48mΩ@10V,20A 2.5V@250uA 1 N-Channel DFN-8(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number WSD30350DN56G
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

60 V, 300 mA N-channel Trench MOSFET - 2N7002/HAMR - Nexperia B.V.
Nexperia B.V.
60 V, 300 mA N-channel Trench MOSFET
2N7002/HAMR
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT23; SOT23
View Details
9 suppliers
SOIC Bipolar Transistor - 283-LM3046M - ERSAELECTRONICS PTE. LTD.
Texas Instruments
SOIC Bipolar Transistor
LM3046M
Specs
Transistor Type Bipolar RF
Polarity NPN
View Details
4 suppliers
Transistor - 26175858 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
SP-140578
View Details
IGBT Module - 444059 - Radwell International
Fuji Electric Corp. of America
IGBT Module
2MBI200NB-120
Specs
Transistor Type IGBT
View Details