Winbond Electronics Corporation America Memory W988D2FBJX6E TR

Description
SDRAM - Mobile LPSDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5.4ns 90-VFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile LPSDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5.4ns 90-VFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W988D2FBJX6ETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPSDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5.4ns 90-VFBGA (8x13)

SDRAM - Mobile LPSDR Memory IC 256Mb (8M x 32) Parallel 166MHz 5.4ns 90-VFBGA (8x13)

Buy Now Datasheet
Memory - W988D2FBJX6E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 166 MHz 5.4 ns 90-VFBGA (8x13)

SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 166 MHz 5.4 ns 90-VFBGA (8x13)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 90VFBGA

IC DRAM 256MBIT PARALLEL 90VFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - W988D2FBJX6E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W988D2FBJX6E TR
Integrated Circuits (ICs) - Memory W988D2FBJX6E TR
IC DRAM 256MBIT PARALLEL 90VFBGA

IC DRAM 256MBIT PARALLEL 90VFBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number W988D2FBJX6ETR-ND W988D2FBJX6E TR W988D2FBJX6E TR W988D2FBJX6E TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 90-TFBGA BGA; 90-TFBGA BGA
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3 suppliers