Winbond Electronics Corporation America Memory W987D2HBJX7E TR

Description
SDRAM - Mobile LPSDR Memory IC 128Mb (4M x 32) Parallel 133MHz 5.4ns 90-VFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile LPSDR Memory IC 128Mb (4M x 32) Parallel 133MHz 5.4ns 90-VFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W987D2HBJX7ETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPSDR Memory IC 128Mb (4M x 32) Parallel 133MHz 5.4ns 90-VFBGA (8x13)

SDRAM - Mobile LPSDR Memory IC 128Mb (4M x 32) Parallel 133MHz 5.4ns 90-VFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W987D2HBJX7E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W987D2HBJX7E TR
Integrated Circuits (ICs) - Memory W987D2HBJX7E TR
IC DRAM 128MBIT PARALLEL 90VFBGA

IC DRAM 128MBIT PARALLEL 90VFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 90VFBGA

IC DRAM 128MBIT PARALLEL 90VFBGA

Supplier's Site Datasheet
Memory - W987D2HBJX7E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 133 MHz 5.4 ns 90-VFBGA (8x13)

SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 133 MHz 5.4 ns 90-VFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number W987D2HBJX7ETR-ND W987D2HBJX7E TR W987D2HBJX7E TR W987D2HBJX7E TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 90-TFBGA BGA BGA; 90-TFBGA
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