Winbond Electronics Corporation America Memory W9816G6JB-5 TR

Description
SDRAM Memory IC 16Mb (1M x 16) LVTTL 200MHz 4.5ns 60-VFBGA (6.4x10.1)
Request a Quote
Description
SDRAM Memory IC 16Mb (1M x 16) LVTTL 200MHz 4.5ns 60-VFBGA (6.4x10.1)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

W9816G6JB-5 TR is a high-speed synchronous dynamic random access memory (SDRAM) from Lingto Electronic Limited, organized as 512K words vó 2 banks vó 16 bits. It operates at a clock frequency of up to 200 MHz with a CAS latency of 3, making it suitable for high-performance applications. The device supports various burst lengths (1, 2, 4, 8, and full page) and features a programmable Mode Register for optimizing performance. It operates with a power supply of 3.3V ¬± 0.3V and has a self-refresh capability. The memory is packaged in a VFBGA format with 60 balls, adhering to RoHS compliance. This product is ideal for applications requiring efficient memory access and high data bandwidth.

Datasheet Summary
Powered by GS/AI

W9816G6JB-5 TR is a high-speed synchronous dynamic random access memory (SDRAM) from Lingto Electronic Limited, organized as 512K words vó 2 banks vó 16 bits. It operates at a clock frequency of up to 200 MHz with a CAS latency of 3, making it suitable for high-performance applications. The device supports various burst lengths (1, 2, 4, 8, and full page) and features a programmable Mode Register for optimizing performance. It operates with a power supply of 3.3V ¬± 0.3V and has a self-refresh capability. The memory is packaged in a VFBGA format with 60 balls, adhering to RoHS compliance. This product is ideal for applications requiring efficient memory access and high data bandwidth.

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W9816G6JB-5TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 16Mb (1M x 16) LVTTL 200MHz 4.5ns 60-VFBGA (6.4x10.1)

SDRAM Memory IC 16Mb (1M x 16) LVTTL 200MHz 4.5ns 60-VFBGA (6.4x10.1)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W9816G6JB-5 TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W9816G6JB-5 TR
Integrated Circuits (ICs) - Memory W9816G6JB-5 TR
16MB, SDR SDRAM, 200MHZ T&R

16MB, SDR SDRAM, 200MHZ T&R

Supplier's Site
16MB, SDR SDRAM, 200MHZ T&R

16MB, SDR SDRAM, 200MHZ T&R

Supplier's Site Datasheet
Memory - W9816G6JB-5 TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 16Mbit LVTTL 200 MHz 4.5 ns 60-VFBGA (6.4x10.1)

SDRAM Memory IC 16Mbit LVTTL 200 MHz 4.5 ns 60-VFBGA (6.4x10.1)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W9816G6JB-5TR-ND W9816G6JB-5 TR W9816G6JB-5 TR W9816G6JB-5 TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 16000 kbits 16000 kbits 16000 kbits 16000 kbits
Package Type 60-TFBGA BGA BGA; 60-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-3745-01 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882745 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - AS4C1259 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 100 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details