Winbond Electronics Corporation America Memory W979H2KBVX2E TR

Description
SDRAM - Mobile LPDDR2-S4B Memory IC 512Mb (16M x 32) HSUL_12 400MHz 134-VFBGA (10x11.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR2-S4B Memory IC 512Mb (16M x 32) HSUL_12 400MHz 134-VFBGA (10x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W979H2KBVX2ETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR2-S4B Memory IC 512Mb (16M x 32) HSUL_12 400MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2-S4B Memory IC 512Mb (16M x 32) HSUL_12 400MHz 134-VFBGA (10x11.5)

Buy Now Datasheet
512MB LPDDR2, X32, 400MHZ, -25 ~

512MB LPDDR2, X32, 400MHZ, -25 ~

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - W979H2KBVX2E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W979H2KBVX2E TR
Integrated Circuits (ICs) - Memory W979H2KBVX2E TR
512MB LPDDR2, X32, 400MHZ, -25 ~

512MB LPDDR2, X32, 400MHZ, -25 ~

Supplier's Site
Memory - W979H2KBVX2E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2-S4B Memory IC 512Mbit HSUL_12 400 MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2-S4B Memory IC 512Mbit HSUL_12 400 MHz 134-VFBGA (10x11.5)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W979H2KBVX2ETR-ND W979H2KBVX2E TR W979H2KBVX2E TR W979H2KBVX2E TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - 8 909 002 174 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - MYX6M4424 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MOSFET
Operating Temperature -55 to 125 C (-67 to 257 F)
Package Type CDIP-8LD
View Details
Controllers - DP8422AVX-20 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details