Winbond Electronics Corporation America Memory W979H2KBVX2E TR

Description
SDRAM - Mobile LPDDR2-S4B Memory IC 512Mb (16M x 32) HSUL_12 400MHz 134-VFBGA (10x11.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR2-S4B Memory IC 512Mb (16M x 32) HSUL_12 400MHz 134-VFBGA (10x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W979H2KBVX2ETR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR2-S4B Memory IC 512Mb (16M x 32) HSUL_12 400MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2-S4B Memory IC 512Mb (16M x 32) HSUL_12 400MHz 134-VFBGA (10x11.5)

Buy Now Datasheet
Memory - W979H2KBVX2E TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2-S4B Memory IC 512Mbit HSUL_12 400 MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2-S4B Memory IC 512Mbit HSUL_12 400 MHz 134-VFBGA (10x11.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - W979H2KBVX2E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W979H2KBVX2E TR
Integrated Circuits (ICs) - Memory W979H2KBVX2E TR
512MB LPDDR2, X32, 400MHZ, -25 ~

512MB LPDDR2, X32, 400MHZ, -25 ~

Supplier's Site
512MB LPDDR2, X32, 400MHZ, -25 ~

512MB LPDDR2, X32, 400MHZ, -25 ~

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W979H2KBVX2ETR-ND W979H2KBVX2E TR W979H2KBVX2E TR W979H2KBVX2E TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
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2 suppliers