Winbond Electronics Corporation America Memory W978H6KBVX2E

Description
SDRAM - Mobile LPDDR2 Memory IC 256Mb (16M x 16) Parallel 400MHz 134-VFBGA (10x11.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR2 Memory IC 256Mb (16M x 16) Parallel 400MHz 134-VFBGA (10x11.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W978H6KBVX2E-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR2 Memory IC 256Mb (16M x 16) Parallel 400MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 256Mb (16M x 16) Parallel 400MHz 134-VFBGA (10x11.5)

Buy Now Datasheet
Memory IC and Storage Component - 774-W978H6KBVX2E - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-W978H6KBVX2E
Memory IC and Storage Component 774-W978H6KBVX2E
IC DRAM 256MBIT PAR 134VFBGA Product overview: W978H6KBVX2E from Winbond Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-W978H6KBVX2E can be used for catalog matching and distributor lookup.

IC DRAM 256MBIT PAR 134VFBGA Product overview: W978H6KBVX2E from Winbond Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-W978H6KBVX2E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - W978H6KBVX2E - 809834-W978H6KBVX2E - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - W978H6KBVX2E
809834-W978H6KBVX2E
Memory - SDRAM - W978H6KBVX2E 809834-W978H6KBVX2E
Manufacturer: Winbond Electronics Win Source Part Number: 809834-W978H6KBVX2E Packaging: Tray Mounting Style: SMD Technology: SDRAM - Mobile LPDDR2 Memory Type: Volatile Memory Size: 256Mb (16M x 16) Supplier Device Package: 134-VFBGA (10x11.5) Temperature Range - Operating: -25°C ~ 85°C (TC) Memory Format: DRAM Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 134-VFBGA Popularity: Medium Fake Threat In the Open Market: 80 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 168 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.14V ~ 1.95V

Manufacturer: Winbond Electronics
Win Source Part Number: 809834-W978H6KBVX2E
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - Mobile LPDDR2
Memory Type: Volatile
Memory Size: 256Mb (16M x 16)
Supplier Device Package: 134-VFBGA (10x11.5)
Temperature Range - Operating: -25°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 134-VFBGA
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 168
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.14V ~ 1.95V

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Integrated Circuits (ICs) - Memory - W978H6KBVX2E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W978H6KBVX2E
Integrated Circuits (ICs) - Memory W978H6KBVX2E
IC DRAM 256MBIT PAR 134VFBGA

IC DRAM 256MBIT PAR 134VFBGA

Supplier's Site
IC DRAM 256MBIT PAR 134VFBGA

IC DRAM 256MBIT PAR 134VFBGA

Supplier's Site Datasheet
Memory - W978H6KBVX2E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 256Mbit Parallel 400 MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 256Mbit Parallel 400 MHz 134-VFBGA (10x11.5)

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number W978H6KBVX2E-ND 774-W978H6KBVX2E 809834-W978H6KBVX2E W978H6KBVX2E W978H6KBVX2E W978H6KBVX2E
Product Name Memory Memory IC and Storage Component Memory - SDRAM - W978H6KBVX2E Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -25 to 85 C (-13 to 185 F) -25 C (-13 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F) -25 to 85 C (-13 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 134-VFBGA BGA BGA; 134-VFBGA
Supply Voltage 1.14V ~ 1.95V 1.14~1.7 1.14V ~ 1.95V 1.14V ~ 1.95V 1.14V ~ 1.95V
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