Winbond Electronics Corporation America Memory W971GG8SS-25 TR

Description
IC DRAM 1GBIT SSTL 18 60WBGA
Description
IC DRAM 1GBIT SSTL 18 60WBGA

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Product
Description
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IC DRAM 1GBIT SSTL 18 60WBGA

IC DRAM 1GBIT SSTL 18 60WBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - W971GG8SS-25 TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W971GG8SS-25 TR
Integrated Circuits (ICs) - Memory W971GG8SS-25 TR
IC DRAM 1GBIT SSTL 18 60WBGA

IC DRAM 1GBIT SSTL 18 60WBGA

Supplier's Site
Memory - W971GG8SS-25 TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit SSTL_18 400 MHz 400 ps 60-WBGA (8x9.5)

SDRAM - DDR2 Memory IC 1Gbit SSTL_18 400 MHz 400 ps 60-WBGA (8x9.5)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number W971GG8SS-25 TR W971GG8SS-25 TR W971GG8SS-25 TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.4000 ns 0.4000 ns 0.4000 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Data Rate 400 MHz
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