Winbond Electronics Corporation America Memory W971GG8SS-25 TR

Description
IC DRAM 1GBIT SSTL 18 60WBGA
Description
IC DRAM 1GBIT SSTL 18 60WBGA

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Description
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IC DRAM 1GBIT SSTL 18 60WBGA

IC DRAM 1GBIT SSTL 18 60WBGA

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Memory - W971GG8SS-25 TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit SSTL_18 400 MHz 400 ps 60-WBGA (8x9.5)

SDRAM - DDR2 Memory IC 1Gbit SSTL_18 400 MHz 400 ps 60-WBGA (8x9.5)

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Integrated Circuits (ICs) - Memory - W971GG8SS-25 TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
W971GG8SS-25 TR
Integrated Circuits (ICs) - Memory W971GG8SS-25 TR
IC DRAM 1GBIT SSTL 18 60WBGA

IC DRAM 1GBIT SSTL 18 60WBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number W971GG8SS-25 TR W971GG8SS-25 TR W971GG8SS-25 TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4000 ns 0.4000 ns 0.4000 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Operating Temperature 0 to 85 C (32 to 185 F) 0 to 85 C (32 to 185 F)
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