Texas Instruments Memory JM38510/23106BEA

Description
Static Ram, 1K X 1, With 3-State Outputs, 60 Ns Access Time
Request a Quote Datasheet
Description
Static Ram, 1K X 1, With 3-State Outputs, 60 Ns Access Time
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - JM38510/23106BEA - Rochester Electronics
Newburyport, MA, United States
Static Ram, 1K X 1, With 3-State Outputs, 60 Ns Access Time

Static Ram, 1K X 1, With 3-State Outputs, 60 Ns Access Time

Supplier's Site Datasheet
Memory - JM38510/23106BEA - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
JM38510/23106BEA
Integrated Circuits (ICs) - Memory - Memory JM38510/23106BEA
STATIC RAM, 1K X 1, WITH 3 STATE

STATIC RAM, 1K X 1, WITH 3 STATE

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number JM38510/23106BEA JM38510/23106BEA JM38510/23106BEA
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - Memory - Controllers - BQ2205LYPWR - 1154093-BQ2205LYPWR - Win Source Electronics
Specs
Operating Temperature -20 to 70 C (-4 to 158 F)
Package Type SSOP
Supply Voltage 3 V ~ 3.6 V
View Details
4 suppliers
Memory - 24C16/SL - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 16 kbits
View Details
Memory - CY14B101K-SP25XC-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1000 kbits
View Details
2 suppliers
Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details