Texas Instruments Memory JM38510/23106BEA

Description
Static Ram, 1K X 1, With 3-State Outputs, 60 Ns Access Time
Request a Quote Datasheet
Description
Static Ram, 1K X 1, With 3-State Outputs, 60 Ns Access Time
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - JM38510/23106BEA - Rochester Electronics
Newburyport, MA, United States
Static Ram, 1K X 1, With 3-State Outputs, 60 Ns Access Time

Static Ram, 1K X 1, With 3-State Outputs, 60 Ns Access Time

Supplier's Site Datasheet
Memory - JM38510/23106BEA - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
JM38510/23106BEA
Integrated Circuits (ICs) - Memory - Memory JM38510/23106BEA
STATIC RAM, 1K X 1, WITH 3 STATE

STATIC RAM, 1K X 1, WITH 3 STATE

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number JM38510/23106BEA JM38510/23106BEA JM38510/23106BEA
Product Name Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V016SA12YI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - AS5C512K8 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Controllers - BQ2201PNG4 - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 8-DIP (0.300\", 7.62mm)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Flash Memory - 1882648P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details