SDRAM - Mobile LPDDR Memory IC 512Mb (32M x 16) Parallel 200MHz 5ns 60-VFBGA (8x9)
Manufacturer: Winbond Electronics
Win Source Part Number: 728370-W949D6DBHX5E
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - Mobile LPDDR
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 5ns
Categories: Integrated Circuits
Supplier Device Package: 60-VFBGA (8x9)
Temperature Range - Operating: -25°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 312
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V
IC DRAM 512MBIT PAR 60VFBGA Product overview: W949D6DBHX5E from Winbond Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-W949D6DBHX5E can be used for catalog matching and distributor lookup.
IC DRAM 512MBIT PARALLEL 60VFBGA
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)
IC DRAM 512MBIT PARALLEL 60VFBGA
IC DRAM 512MBIT PARALLEL 60VFBGA
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | W949D6DBHX5E-ND | 728370-W949D6DBHX5E | 774-W949D6DBHX5E | W949D6DBHX5E | W949D6DBHX5E | W949D6DBHX5E | W949D6DBHX5E |
| Product Name | Memory | Memory - SDRAM - W949D6DBHX5E | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | SDRAM - Mobile LPDDR; DRAM Chip |
| Operating Temperature | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | -25 C (-13 F) | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | -25 to 85 C (-13 to 185 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |
| Package Type | 60-TFBGA | BGA; 60-TFBGA | BGA | 60-TFBGA | |||
| Supply Voltage | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7 | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V |
