Winbond Electronics Corporation America Memory W66BQ6NBUAGJ

Description
SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W66BQ6NBUAGJ-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - W66BQ6NBUAGJ - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
W66BQ6NBUAGJ
Integrated Circuits (ICs) - Memory - Memory W66BQ6NBUAGJ
IC DRAM 2GBIT LVSTL 11 200WFBGA

IC DRAM 2GBIT LVSTL 11 200WFBGA

Supplier's Site
2GB LPDDR4X, X16, 1866MHZ, -40C~

2GB LPDDR4X, X16, 1866MHZ, -40C~

Supplier's Site Datasheet
Memory - W66BQ6NBUAGJ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4X Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4X Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)

Buy Now Datasheet

Technical Specifications

  DigiKey Acme Chip Technology Co., Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W66BQ6NBUAGJ-ND W66BQ6NBUAGJ W66BQ6NBUAGJ W66BQ6NBUAGJ
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type 200-WFBGA 1.866 GHz BGA; 200-WFBGA
Supply Voltage 1.06V ~ 1.17V, 1.7V ~ 1.95V Surface Mount 1.06V ~ 1.17V, 1.7V ~ 1.95V
Unlock Full Specs
to access all available technical data

Similar Products

Logic - FIFOs Memory - 67L401N - Lingto Electronic Limited
Rochester Electronics
Specs
Data Rate 10 MHz
Access Time 45 ns
Operating Current 160 mA
View Details
Memory - 593995-005-69 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - MT4C1004J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details