Winbond Electronics Corporation America Memory W66BQ6NBUAGJ

Description
SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W66BQ6NBUAGJ-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)

Buy Now Datasheet
2GB LPDDR4X, X16, 1866MHZ, -40C~

2GB LPDDR4X, X16, 1866MHZ, -40C~

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - W66BQ6NBUAGJ - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
W66BQ6NBUAGJ
Integrated Circuits (ICs) - Memory - Memory W66BQ6NBUAGJ
IC DRAM 2GBIT LVSTL 11 200WFBGA

IC DRAM 2GBIT LVSTL 11 200WFBGA

Supplier's Site
Memory - W66BQ6NBUAGJ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4X Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4X Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W66BQ6NBUAGJ-ND W66BQ6NBUAGJ W66BQ6NBUAGJ W66BQ6NBUAGJ
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type 200-WFBGA 1.866 GHz BGA; 200-WFBGA
Supply Voltage 1.06V ~ 1.17V, 1.7V ~ 1.95V Surface Mount 1.06V ~ 1.17V, 1.7V ~ 1.95V
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