Winbond Electronics Corporation America Memory W66BQ6NBUAGJ

Description
SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)
Request a Quote Datasheet
Description
SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 256-W66BQ6NBUAGJ-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4X Memory IC 2Gb (128M x 16) LVSTL_11 1.866GHz 3.5ns 200-WFBGA (10x14.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - W66BQ6NBUAGJ - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
W66BQ6NBUAGJ
Integrated Circuits (ICs) - Memory - Memory W66BQ6NBUAGJ
IC DRAM 2GBIT LVSTL 11 200WFBGA

IC DRAM 2GBIT LVSTL 11 200WFBGA

Supplier's Site
Memory - W66BQ6NBUAGJ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4X Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4X Memory IC 2Gbit LVSTL_11 1.866 GHz 3.5 ns 200-WFBGA (10x14.5)

Buy Now Datasheet
2GB LPDDR4X, X16, 1866MHZ, -40C~

2GB LPDDR4X, X16, 1866MHZ, -40C~

Supplier's Site Datasheet

Technical Specifications

  DigiKey Acme Chip Technology Co., Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 256-W66BQ6NBUAGJ-ND W66BQ6NBUAGJ W66BQ6NBUAGJ W66BQ6NBUAGJ
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type 200-WFBGA 1.866 GHz BGA; 200-WFBGA
Supply Voltage 1.06V ~ 1.17V, 1.7V ~ 1.95V Surface Mount 1.06V ~ 1.17V, 1.7V ~ 1.95V
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