IC DRAM 1GBIT PAR 96VFBGA Product overview: W631GU6MB11I from Winbond Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-W631GU6MB11I can be used for catalog matching and distributor lookup.
SDRAM - DDR3L Memory IC 1Gb (64M x 16) Parallel 933MHz 20ns 96-VFBGA (7.5x13)
IC DRAM 1GBIT PARALLEL 96VFBGA
IC DRAM 1GBIT PARALLEL 96VFBGA
SDRAM - DDR3L Memory IC 1Gbit Parallel 933 MHz 20 ns 96-VFBGA (7.5x13)
| ERSAELECTRONICS PTE. LTD. | DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-W631GU6MB11I | W631GU6MB11I-ND | W631GU6MB11I | W631GU6MB11I | W631GU6MB11I |
| Product Name | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | |
| Operating Temperature | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | -40 to 95 C (-40 to 203 F) | |
| Package Type | BGA; Tray | 96-VFBGA | BGA | BGA; 96-VFBGA |
