Winbond Electronics Corporation America Memory W25Q128BVBAP

Description
FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 104 MHz 7 ns 63-VFBGA (9x11)
Datasheet
Description
FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 104 MHz 7 ns 63-VFBGA (9x11)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - W25Q128BVBAP - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 104 MHz 7 ns 63-VFBGA (9x11)

FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 104 MHz 7 ns 63-VFBGA (9x11)

Buy Now
IC FLASH

IC FLASH

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
W25Q128BVBAP
Integrated Circuits (ICs) - Memory - Memory W25Q128BVBAP
IC FLASH 128MBIT SPI 63VFBGA

IC FLASH 128MBIT SPI 63VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number W25Q128BVBAP W25Q128BVBAP W25Q128BVBAP
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 7 ns 7 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 128000 kbits 128000 kbits 128000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AM29LV116DT-90EI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 90 ns
Density 16000 kbits
View Details
SN54ACT3632 512 x 36 x 2 Synchronous Bidirectional FIFO Memory - SN54ACT3632HFP - Texas Instruments
Specs
Memory Category FIFO
Package Type CFP
View Details
4 suppliers
Quad Memory IC and Storage Component - 774-S25FL064P0XMFA000 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Access Time 8 ns
Endurance 100000 Write/Erase Cycles
View Details
5 suppliers
Flash Memory - 1882682 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details