Winbond Electronics Corporation America Integrated Circuits (ICs) - Memory - Memory W25Q128BVBAP

Description
IC FLASH 128MBIT SPI 63VFBGA
Datasheet
Description
IC FLASH 128MBIT SPI 63VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
W25Q128BVBAP
Integrated Circuits (ICs) - Memory - Memory W25Q128BVBAP
IC FLASH 128MBIT SPI 63VFBGA

IC FLASH 128MBIT SPI 63VFBGA

Supplier's Site
IC FLASH

IC FLASH

Supplier's Site Datasheet
Memory - W25Q128BVBAP - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 104 MHz 7 ns 63-VFBGA (9x11)

FLASH - NOR Memory IC 128Mbit SPI - Quad I/O 104 MHz 7 ns 63-VFBGA (9x11)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number W25Q128BVBAP W25Q128BVBAP W25Q128BVBAP
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Data Rate 104 MHz
Cycle Time ? to 3.00E6 ns
Density 128000 kbits 128000 kbits 128000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - IS29GL01GS-11DHB023 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
 - 9403ASDMQB - Rochester Electronics
Specs
Memory Category FIFO
Package Type DIP; DIP24
View Details
3 suppliers
Memory - AS5C512K8 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 24LC16T-I/SL - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3.50E6 ns
Density 16 kbits
View Details