WeEn Semiconductors Single FETs, MOSFETs WSJ2T65R099DXQ

WSJ2T65R099D is a high-voltage N-channel super-junction MOSFET in a TO220 package, designed for high-efficiency power conversion applications such as LLC converters, server power supplies, and LED drivers. It features a drain-source voltage rating of 650 V, a continuous drain current of 31 A at 25 °C, and a maximum on-state resistance of 99 mΩ at V_GS = 10 V and I_D = 16 A. The device includes an integrated ultrafast body diode, is 100% avalanche tested with a single-pulse avalanche energy rating of 331 mJ, and supports a maximum junction temperature of 150 °C. Its total gate charge is 59 nC and output capacitive energy is 7.2 μJ at 400 V. The package is SOT78, with pins for gate, drain, and source, and the mounting base is connected to the drain.