WeEn Semiconductors Single FETs, MOSFETs WSJ2T65R099DBJ

WSJ2T65R099DBJ is an N-channel super-junction MOSFET in a TO263 package, designed for high-efficiency power conversion applications such as LLC converters, server power supplies, and LED drivers. It has a drain-source voltage rating of 650 V, a continuous drain current of 31 A at 25 °C, and a drain-source on-state resistance of 82 to 99 mΩ at 10 V gate voltage. The device features an integrated ultrafast body diode, is 100% avalanche-tested with a single-pulse avalanche energy of 331 mJ, and supports a maximum junction temperature of 150 °C. Its thermal resistance from junction to case is 0.35 to 0.47 K/W, and it meets the IEC 60134 absolute maximum rating system. The part is supplied on a reel and packaged as TO263N.