WeEn Semiconductors Single FETs, MOSFETs WNSCM80120WQ

N-Channel Silicon Carbide MOSFET in a 3-lead TO-247 plastic package, designed for high-frequency, high-efficiency switching applications. The device has a drain-source voltage rating of 1200 V, a continuous drain current of 42 A at 25 °C, and a maximum power dissipation of 230 W. It features a drain-source on-state resistance of 80 to 98 mΩ at 25 °C and a total gate charge of 59 nC. The gate-source voltage is limited to -5 V to 20 V under operating conditions. The junction and storage temperature ranges are -55 °C to 175 °C. The package is RoHS compliant and designed for easy paralleling with controllable dV/dt to optimize EMI.