Vishay Intertechnology, Inc. 1200V 658W IGBT Transistor VS-GB75SA120UP

IGBT MODULE 1200V 658W SOT227 Product overview: VS-GB75SA120UP from Vishay General Semiconductor – Diodes Division is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 658W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 658W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-VS-GB75SA120UP can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Semiconductor Diodes Division
Win Source Part Number: 774979-VS-GB75SA120UP
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: SOT-227-4, miniBLOC
Mounting: Chassis Mount
Power - Max: 658W
Configuration: Single
Input: Standard
IGBT Type: NPT
NTC Thermistor: No
Part Status: Obsolete(EOL)
Categories: Discrete Semiconductor Products
Manufacturer Package: SOT-227
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Current - Collector Cutoff (Maximum): 250μA
Vce(on) (Maximum) @ Vge, Ic: 3.8V @ 15V, 75A
Alternative Parts (Cross-Reference): VS-GB90SA120U;
Introduction Date: January 01, 2000
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

IGBT Module NPT Single 1200V 658W Chassis Mount SOT-227